STMicroelectronics STB21NM60ND

Name: STMicroelectronics STB21NM60ND
Brand: STMicroelectronics
SKU: STB21NM60ND

N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in D2PAK package

Obsolete

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Distributor	SKU		Min	Pkg
Farnell	STB21NM60ND	0	1		1.640*	1.640*	1.640*	1.640*	1.640*	18h
Win Source	WS-STB21NM60ND	1,000	75				0.793	0.529	0.529	19h
Worldway Electronics	STB21NM60ND	24,498	7	Tape & Reel		1.863	1.806	1.711	1.711	17h
GreenTree Electronics	STB21NM60ND	4,000								8h
Aztech	STB21NM60ND	8,301			6.030	6.030	6.030	6.030	6.030	14h

数据表和文档

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IHS

Datasheet21 页13 年前

Factory Futures

Verical

Components Direct

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-09-12

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2019-04-25

LTD Date2019-10-25

描述

由其分销商提供的 STMicroelectronics STB21NM60ND 的描述。

N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in D2PAK package

STMicroelectronics

Power Mosfet, N Channel, 17 A, 600 V, 0.17 Ohm, 10 V, 4 V Rohs Compliant: Yes

Newark

STB21NM60ND N-channel MOSFET Transistor, 17 A, 600 V, 2+Tab-Pin TO-263

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 600V 17A 3-Pin(2+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 17A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, N CH, 600V, 17A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.17ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power

Farnell