供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-05-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2015-01-31
LTD Date2015-07-31
相关零件
InfineonIPP100N08S207AKSA1
MOSFET N-CH 75V 100A TO220-3 / N-Channel 75 V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3-1
InfineonIPI032N06N3GAKSA1
MOSFET N-CH 60V 120A TO262-3 / N-Channel 60 V 120A (Tc) 188W (Tc) Through Hole PG-TO262-3
描述
由其分销商提供的 STMicroelectronics STI260N6F6 的描述。
N-channel 60 V, 0.0024 Ohm, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in I2PAK package
STI260N6F6 N-channel MOSFET Transistor, 120 A, 60 V, 3-Pin I2PAK
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) I2PAK Tube
Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance3 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time62.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance11.4 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation300 W
Rds On Max3 mΩ
Resistance3 MΩ
Rise Time165 ns
Schedule B8541290080
Turn-Off Delay Time144.4 ns
Turn-On Delay Time31.4 ns
Dimensions
Height10.75 mm
Length10.4 mm
Width4.6 mm