供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-08-12
Lifecycle StatusObsolete (Last Updated: 7 months ago)
相关零件
InfineonIPI032N06N3GAKSA1
MOSFET N-CH 60V 120A TO262-3 / N-Channel 60 V 120A (Tc) 188W (Tc) Through Hole PG-TO262-3
InfineonIPI040N06N3GXKSA1
OptiMOS™3 Power-Transistor Features for sync. rectification, drives and dc/dc SMPS
描述
由其分销商提供的 onsemi FDI040N06 的描述。
Trans MOSFET N-CH 60V 168A 3-Pin(3+Tab) I2PAK Rail
Power Field-Effect Transistor, 120A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
231W(Tc) 4.5V@ 250µA 133nC@ 10V 1individualNChannel 60V 4mΩ@ 75A,10V 8.235pF@25V I2PAK，TO-262 Through hole mounting
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Weight2.084 g
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance4 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time24 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance8.235 nF
Max Operating Temperature175 °C
Max Power Dissipation231 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation231 W
Rds On Max4 mΩ
Rise Time40 ns
Turn-Off Delay Time55 ns