Infineon IGP06N60TXKSA1

Name: Infineon IGP06N60TXKSA1
Brand: Infineon
SKU: IGP06N60TXKSA1

Trans IGBT Chip N-CH 600V 12A 88000mW 3-Pin(3+Tab) TO-220AB Tube

$ 0.466

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Newark		IGP06N60TXKSA1	367	1		1.560	1.100	0.652	0.466	0.365
Arrow Electronics	2	IGP06N60TXKSA1	500	1		0.579	0.574	0.574	0.574	0.574
Rochester Electronics		IGP06N60TXKSA1	24,385					0.482	0.400	0.356	2h
DigiKey		IGP06N60TXKSA1-ND	146	1	Tube	1.600	1.600	0.671	0.671	0.671
Avnet		IGP06N60TXKSA1	0	1K							3d

数据表和文档

下载 Infineon IGP06N60TXKSA1 的数据表和制造商文档。

IHS

Datasheet12 页12 年前

_legacy Avnet

库存历史记录

3 个月趋势:

-5.74%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-11-10

Lifecycle StatusObsolete (Last Updated: 2 weeks ago)

LTB Date2026-03-15

LTD Date2026-09-15

描述

由其分销商提供的 Infineon IGP06N60TXKSA1 的描述。

Trans IGBT Chip N-CH 600V 12A 88000mW 3-Pin(3+Tab) TO-220AB Tube

Verical

IGP06N60T Series 600 V 12 A Through Hole Low Loss IGBT - PG-TO-220-3

Future Electronics

Igbt, 600V, 12A, 88W, To-220 Rohs Compliant: Yes |Infineon Technologies IGP06N60TXKSA1

Newark

Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-220AB

IHS

Hard-switching 600 V, 6 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Infineon