STMicroelectronics STGP10M65DF2

Trench gate field-stop IGBT M series, 650 V 10 A low loss
$ 0.615
Production
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价格与库存

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DistributorSKUMinPkg
Future ElectronicsSTGP10M65DF21,0001KTube
NewarkSTGP10M65DF21001
DigiKey497-15840-5-ND1,8481Tube
TME
2
STGP10M65DF201
14h
AvnetSTGP10M65DF202K
3d

数据表和文档

下载 STMicroelectronics STGP10M65DF2 的数据表和制造商文档。

element14 APAC

Datasheet18 页10 年前
Datasheet18 页11 年前

Newark

库存历史记录

3 个月趋势:
+44.44%
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供应链

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-04-27
Lifecycle StatusProduction (Last Updated: 4 months ago)

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描述

由其分销商提供的 STMicroelectronics STGP10M65DF2 的描述。

Trench gate field-stop IGBT M series, 650 V 10 A low loss
STMicroelectronics
Trans IGBT Chip N-CH 650V 20A 115mW 3-Pin(3+Tab) TO-220AB Tube
Verical
STMICROELECTRONICS STGP10M65DF2 IGBT Single Transistor, 20 A, 1.55 V, 115 W, 650 V, TO-220, 3 Pins
Utmel Electronic
IGBT, SINGLE, 650V, 20A, TO-220-3; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 115W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pi
Farnell
Igbt, Single, 650V, 20A, To-220; Continuous Collector Current:20A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:115W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C; Msl:- Rohs Compliant: Yes |Stmicroelectronics STGP10M65DF2
Newark

图片

Farnell
TME
Lanka Micro
LZChips

制造商别名

STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics