供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-05-17
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2015-01-31
LTD Date2015-07-31
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描述
由其分销商提供的 STMicroelectronics STGF35HF60W 的描述。
Trans IGBT Chip N-CH 600V 19A 3-Pin(3+Tab) TO-247 Tube
IGBT Transistors 35A 600V Ultrafast IGBT over 100kHz OP
12 A, 600 V Ultrafast IGBT
Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel
IGBT 600V 19A 40W TO220FP
IGBT 12A (@100C) 600
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Weight2.299997 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.5 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Max Collector Current19 A
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Operating Temperature-55 °C
Turn-Off Delay Time225 ns
Turn-On Delay Time30 ns