Infineon IRGIB15B60KD1P

Name: Infineon IRGIB15B60KD1P
Brand: Infineon
SKU: IRGIB15B60KD1P

Trans IGBT Chip N-CH 600V 19A 3-Pin(3+Tab) TO-220 Full-Pack

$ 12.43

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRGIB15B60KD1P	0	2	Bulk		13.120	12.430	12.430	12.430	9h
Farnell		IRGIB15B60KD1P	0	1		2.301*	2.220*	2.138*	1.908*	1.908*	15h
Win Source		WS-IRGIB15B60KD1P	5,112	15				2.941	2.636	2.636	16h
Worldway Electronics	2	IRGIB15B60KD1P	18,015	7	Tube		4.307	4.175	3.955	3.955	17h
Chipsmall Limited		IRGIB15B60KD1P	210,000	1		17.280	15.552	9.936	8.640	8.640	16h

数据表和文档

下载 Infineon IRGIB15B60KD1P 的数据表和制造商文档。

IHS

Datasheet13 页22 年前

Upverter

iiiC

RS (Formerly Allied Electronics)

Newark

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-01-09

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2020-06-30

LTD Date2020-12-31

描述

由其分销商提供的 Infineon IRGIB15B60KD1P 的描述。

Trans IGBT Chip N-CH 600V 19A 3-Pin(3+Tab) TO-220 Full-Pack

Verical

600V Low-Vceon Copack IGBT in a TO-220 FullPak package

International Rectifier

Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, TO-220AB

IHS

IGBT 19A 600V Ultrafast Diode TO-220FP

RS (Formerly Allied Electronics)

The 5th generation of ultrafast 600 V, 15 A IGBT in a TO-220 Full-Pak package co-packed with a low Vf diode has been optimized for lower conduction losses, FULLPAK220-3COPAK, RoHS

Infineon SCT

IGBT, TO-220FP; Transistor Type:IGBT; DC Collector Current:19A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:52W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:19A; Package / Case:TO-220FP; Power Dissipation Max:52W; Power Dissipation Pd:52W; Power Dissipation Pd:52W; Pulsed Current Icm:38A; Rise Time:35ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC