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Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
描述
由其分销商提供的 STMicroelectronics STGF10NB60SD 的描述。
STGF10NB60SD Series 600 V 23 A Through Hole Silicon IGBT - TO-220FP
16 A, 600 V low drop IGBT with soft and fast recovery diode
Trans IGBT Chip N-CH 600V 23A 25W 3-Pin(3+Tab) TO-220FP Tube
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25W 23A 600V TO-220FP-3 IGBT Transistors / Modules ROHS
IGBT, TO-220FP; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 25W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Base Breakdown Voltage (VCES)600 V
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.35 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current23 A
Continuous Drain Current (ID)20 A
Current Rating10 A
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Forward Current20 A
Forward Voltage1.9 V
Max Breakdown Voltage600 V
Max Collector Current23 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation25 W
Reverse Recovery Time37 ns
Rise Time460 ns
Schedule B8541290080
Turn-Off Delay Time1.2 µs
Turn-On Delay Time460 ns
Voltage Rating (DC)600 V
Dimensions
Height20 mm
Length10.4 mm
Width4.6 mm