供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-03-30
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-06-22
LTD Date2018-12-22
相关零件
STMicroelectronicsSTI33N60M2
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in I2PAK package
STMicroelectronicsSTI33N65M2
N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in I2PAK package
STMicroelectronicsSTFI31N65M5
N-channel 650 V, 0.124 Ohm typ., 22 A MDmesh M5 Power MOSFET in I2PAKFP package
描述
由其分销商提供的 STMicroelectronics STFI26N60M2 的描述。
N-channel 600 V, 0.14 Ohm typ., 20 A MDmesh M2 Power MOSFET in a I2PAKFP package
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) I2PAKFP Tube
Power Field-Effect Transistor, 20A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-281
N-channel MDmesh >350 V to 700 V
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)20 A
Drain to Source Resistance165 mΩ
Drain to Source Voltage (Vdss)600 V
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max165 mΩ
Schedule B8541290080