相关零件
STMicroelectronicsSTI33N65M2
N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in I2PAK package
STMicroelectronicsSTFI34N65M5
N-channel 650 V, 0.09 Ohm typ., 28 A MDmesh M5 Power MOSFET in I2PAKFP package
STMicroelectronicsSTI33N60M2
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in I2PAK package
描述
由其分销商提供的 STMicroelectronics STFI31N65M5 的描述。
N-channel 650 V, 0.124 Ohm typ., 22 A MDmesh M5 Power MOSFET in I2PAKFP package
Power Field-Effect Transistor, 22A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
STFI31N65M5 N-channel MOSFET Transistor, 22 A, 710 V, 3-Pin I2PAKFP
Trans MOSFET N-CH 650V 22A 3-Pin(3+Tab) I2PAKFP Tube
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)22 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance148 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time8.5 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.865 nF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage710 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation30 W
Rds On Max148 mΩ
Rise Time8 ns
Turn-Off Delay Time11 ns
Turn-On Delay Time46 ns
Dimensions
Height10.85 mm
Length10.4 mm
Width4.6 mm