供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-12-19
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-06-22
LTD Date2018-12-22
相关零件
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STMicroelectronicsSTFI15N65M5
N-channel 650 V, 0.308 Ohm typ., 11 A MDmesh M5 Power MOSFET in I2PAKFP package
描述
由其分销商提供的 STMicroelectronics STFI13N65M2 的描述。
N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in I2PAKFP package
Trans MOSFET N-CH 650V 10A 3-Pin(3+Tab) I2PAKFP Tube
MOSFET N-CH 650V 10A I2PAKFP
Power Field-Effect Transistor, 10A I(D), 650V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-281
CAP CER 3PF 50V C0G 0402
Ptd High Voltage
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)10 A
Drain to Source Resistance430 mΩ
Drain to Source Voltage (Vdss)650 V
Input Capacitance590 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage650 V
Number of Elements1
Rds On Max430 mΩ
Schedule B8541290080