供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-11-09
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2018-06-22
LTD Date2018-12-22
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描述
由其分销商提供的 STMicroelectronics STFI15N65M5 的描述。
N-channel 650 V, 0.308 Ohm typ., 11 A MDmesh M5 Power MOSFET in I2PAKFP package
STFI15N65M5 N-channel MOSFET Transistor, 11 A, 710 V, 3-Pin I2PAKFP
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) I2PAKFP Tube
Power Field-Effect Transistor, 11A I(D), 650V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-281
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance340 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance816 pF
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max340 mΩ
Rise Time8 ns
Turn-Off Delay Time12.5 ns
Turn-On Delay Time30 ns
Dimensions
Height10.85 mm
Length10.4 mm
Width4.6 mm