供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-08-02
Lifecycle StatusObsolete (Last Updated: 6 months ago)
相关零件
STMicroelectronicsSTD7ANM60N
N-channel 600 V, 5 A, 0.84 Ohm typ., MDmesh(TM) II Power MOSFET in DPAK package
InfineonIPD60R950C6ATMA1
Power MOSFET, N Channel, 650 V, 5.7 A, 0.68 ohm, TO-252 (DPAK), Surface Mount
描述
由其分销商提供的 STMicroelectronics STD7NM64N 的描述。
N-channel 640 V, 5 A, 0.88 Ohm typ. MDmesh(TM) II Power MOSFET in a DPAK package
Low input capacitance and gate charge | MOSFET N-CH 640V 5A DPAK
Trans MOSFET N-CH 640V 5A 3-Pin DPAK T/R
MOSFET N-Ch 640V 5A 0.88Ohm typ. Mdmesh II
Ptd High Voltage |Stmicroelectronics STD7NM64N
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Weight3.949996 g
Technical
Continuous Drain Current (ID)5 A
Drain to Source Breakdown Voltage640 V
Drain to Source Resistance1.05 Ω
Drain to Source Voltage (Vdss)640 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance363 pF
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Operating Temperature-55 °C
Number of Channels1
PackagingTape & Reel (TR)
Rds On Max1.05 Ω
Rise Time10 ns
Turn-Off Delay Time26 ns
Turn-On Delay Time7 ns