STMicroelectronics STD7ANM60N

Name: STMicroelectronics STD7ANM60N
Brand: STMicroelectronics
SKU: STD7ANM60N

N-channel 600 V, 5 A, 0.84 Ohm typ., MDmesh(TM) II Power MOSFET in DPAK package

$ 0.862

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Distributor		SKU		Min	Pkg
Verical		STD7ANM60N	2,500	2500						0.470
Arrow Electronics		STD7ANM60N	2,500	2500						0.471
DigiKey	2	497-13940-1-ND	192	1	Cut Tape	2.350	1.506	1.022	0.749	0.749
TME	2	STD7ANM60N	0	2500						0.809*	4h
Newark		STD7ANM60N	0	1	Cut Tape	2.460	1.670	1.210	0.976	0.976

数据表和文档

下载 STMicroelectronics STD7ANM60N 的数据表和制造商文档。

Future Electronics

Datasheet20 页13 年前

Datasheet18 页14 年前

Farnell

库存历史记录

3 个月趋势:

-89.97%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2012-06-25

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics STD7ANM60N 的描述。

N-channel 600 V, 5 A, 0.84 Ohm typ., MDmesh(TM) II Power MOSFET in DPAK package

STMicroelectronics

STD7ANM60N N-CHANNEL MOSFET TRANSISTOR, 5 A, 600 V, 3-PIN D2PAK

RS (Formerly Allied Electronics)

Mosfet, Aec-Q101, N-Ch, 600V, 5A, 45W Rohs Compliant: Yes |Stmicroelectronics STD7ANM60N

Newark

Trans MOSFET N-CH 600V 5A Automotive 3-Pin(2+Tab) D2PAK T/R

Jak Electronics

Power Field-Effect Transistor, 5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Semicontronic

MOSFET, AEC-Q101, N-CH, 600V, 5A, 45W; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 45W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh II Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Farnell