价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | STB7NK80ZT4 | 539 | 1 | Cut Tape | ||||||||
| Arrow Electronics | STB7NK80ZT4 | 5,000 | 1K | |||||||||
| Verical | STB7NK80ZT4 | 4,000 | 1K | |||||||||
| TME | STB7NK80ZT4 | 17 | 1 | 1h | ||||||||
| DigiKey | 497-6557-1-ND | 2,517 | 1 | Cut Tape |
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描述
由其分销商提供的 STMicroelectronics STB7NK80ZT4 的描述。
N-channel 800 V, 1.5 Ohm typ., 5.2 A Zener-protected SuperMESH Power MOSFET in a D2PAK package
STB7NK80ZT4 N-CHANNEL MOSFET TRANSISTOR, 5.2 A, 800 V, 2+TAB-PIN TO-263
Trans MOSFET N-CH 800V 5.2A 3-Pin(2+Tab) D2PAK T/R
STMicroelectronics NMOS MDmesh, SuperMESH, Vds=800 V, 5.2 A, D2PAK (TO-263), , 3
Power Field-Effect Transistor, 5.2A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 800V, 5.2A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.6A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 5.2A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 800V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
Mosfet, N Channel, 800V, 5.2A, D2Pak; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:2.6A; Tensión Drenaje-Fuente Vds:800V; Resistencia De Activación Rds(On):1.5Ohm; Tensión Vgs De Medición Rds(On):10V |Stmicroelectronics STB7NK80ZT4
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)5.2 A
Current Rating5.2 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance1.8 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.138 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation125 W
Rds On Max1.8 Ω
Resistance1.8 Ω
Rise Time12 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time45 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)800 V
Dimensions
Height4.6 mm
Length10.75 mm
Width10.4 mm