onsemi FQB6N80TM

Name: onsemi FQB6N80TM
Brand: onsemi
SKU: FQB6N80TM

N-Channel Power MOSFET, QFET®, 800 V, 5.8 A, 1.95 Ω, D2PAK

$ 1.11

Obsolete

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价格与库存

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Distributor	SKU		Min	Pkg
Verical	FQB6N80TM	44,000	281				1.110	0.990
Avnet	FQB6N80TM	11,200	325						4h
Rochester Electronics	FQB6N80TM	44,000				1.070	0.888	0.792	2h
Flip Electronics	FQB6N80TM	11,200							6d
RS (Formerly Allied Electronics)	FQB6N80TM	0	5	Bulk	1.390	1.280	1.280	1.280	19h

数据表和文档

下载 onsemi FQB6N80TM 的数据表和制造商文档。

IHS

Datasheet8 页12 年前

Datasheet0 页0 年前

Future Electronics

onsemi

Fairchild Semiconductor

element14 APAC

库存历史记录

3 个月趋势:

+428%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-11-10

Lifecycle StatusObsolete (Last Updated: 3 days ago)

LTB Date2022-06-23

LTD Date2022-12-23

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

描述

由其分销商提供的 onsemi FQB6N80TM 的描述。

N-Channel Power MOSFET, QFET®, 800 V, 5.8 A, 1.95 Ω, D2PAK

onsemi

TRANSISTOR, N-CHANNEL, QFET MOSFET, 800V, 5.8A, 1.95 MOHM AT VGS 10V, D2PAK

RS (Formerly Allied Electronics)

N-Channel 800 V 1.95 Ohm Surface Mount Mosfet - D2PAK-3

Future Electronics

Trans MOSFET N-CH 800V 5.8A 3-Pin(2+Tab) D2PAK T/R

Avnet

Power Field-Effect Transistor, 5.8A I(D), 800V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, N-CH, 800V, 5.8A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.8A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 158W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

Farnell

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor