STMicroelectronics STB36NM60ND

MOSFET N-CH 600V 29A D2PAK / N-Channel 600 V 29A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
Obsolete
制造商页面数据表

价格与库存

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DistributorSKUMinPkg
element14 APAC
2
STB36NM60ND01Cut Tape
9h
Farnell
3
STB36NM60ND01Cut Tape
7h
Microchip USASTB36NM60ND336300
14h
Component Stockers USASTB36NM60ND1,367
1d
Win SourceWS-STB36NM60ND7,0009
22h

数据表和文档

下载 STMicroelectronics STB36NM60ND 的数据表和制造商文档。

IHS

Datasheet18 页13 年前

Future Electronics

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供应链

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-10-24
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-12-01
LTD Date2024-06-01

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描述

由其分销商提供的 STMicroelectronics STB36NM60ND 的描述。

MOSFET N-CH 600V 29A D2PAK / N-Channel 600 V 29A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
Win Source
STB36NM60ND N-channel MOSFET Transistor, 29 A, 600 V, 3-Pin D2PAK
RS (Formerly Allied Electronics)
Trans MOSFET N-CH 600V 29A Automotive 3-Pin(2+Tab) D2PAK T/R
Verical
Automotive-grade N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package
STMicroelectronics
Single N-Channel 600 V 0.11 Ohm 80.4 nC 190 W Silicon SMT Mosfet - TO-263-3
Future Electronics
MOSFET, N-CH, 600V, 29A, 150DEG C, 190W; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.097ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:
element14 APAC

图片

element14 APAC
RS (Formerly Allied Electronics)
RS
Future Electronics
Lanka Micro

制造商别名

STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics