价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | STB45N65M5 | 68,000 | 2 | |||||||||
| Arrow Electronics | STB45N65M5 | 68,000 | 1 | |||||||||
| DigiKey | 497-12940-1-ND | 548 | 1 | Cut Tape | ||||||||
| Newark | STB45N65M5 | 0 | 1 | Cut Tape | ||||||||
| Future Electronics | STB45N65M5 | 0 | 1K | Tape & Reel |
相关零件
STMicroelectronicsSTB38N65M5
N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in D2PAK package
STMicroelectronicsSTB35N65M5
N-channel 650 V, 0.085 Ohm, 27 A MDmesh M5 Power MOSFET in D2PAK package
STMicroelectronicsSTB34N65M5
N-channel 650 V, 0.09 Ohm typ., 28 A MDmesh M5 Power MOSFET in D2PAK package
VishaySIHB30N60E-GE3
MOSFET, N CH, 600V, 29A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
描述
由其分销商提供的 STMicroelectronics STB45N65M5 的描述。
N-channel 650 V, 0.067 Ohm typ., 35 A MDmesh M5 Power MOSFET in D2PAK package
STB45N65M5 N-CHANNEL MOSFET TRANSISTOR, 35 A, 710 V, 3-PIN D2PAK
TEXAS INSTRUMENTS - TPS2031DR - IC, HIGH SIDE MOSFET PWR SW, 5.5V 8-SOIC, FULL REEL
Trans MOSFET N-CH 650V 35A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 35A I(D), 650V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N-Ch, 650V, 35A, To-263; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STB45N65M5
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)35 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance78 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)25 V
Input Capacitance3.375 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation210 W
Manufacturer Package IdentifierD2Pak
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation210 W
Rds On Max78 mΩ
Resistance78 mΩ
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time79.5 ns
Turn-On Delay Time11 ns
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm