备用零件
Price @ 1000
$ 0.57
Stock
204,861
699,660
Authorized Distributors
0
6
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vds)
-
100 V
Continuous Drain Current (ID)
35 A
35 A
Threshold Voltage
-
3 V
Rds On Max
-
52 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
-
115 W
Input Capacitance
1.18 nF
1.18 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
描述
由其分销商提供的 STMicroelectronics STB30NF10 的描述。
35A, 100V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3
N-CHANNEL 100V - 0.038 ohm - 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET™ II POWER MOSFET
Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)35 A
Drain to Source Resistance45 mΩ
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.18 nF
Max Operating Temperature175 °C
Max Power Dissipation90 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Turn-Off Delay Time45 ns
Turn-On Delay Time15 ns
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm