STMicroelectronics STB30NF10T4

Name: STMicroelectronics STB30NF10T4
Brand: STMicroelectronics
SKU: STB30NF10T4

N-channel 100V 0.038 Ohm 35A D2PAK Low Gate Charge Stripfet II Mosfet

$ 0.645

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Distributor		SKU		Min	Pkg
Newark		STB30NF10T4	971	1	Cut Tape	2.200	1.450	1.050	0.821	0.821
Arrow Electronics	2	STB30NF10T4	5,000	1K					0.554	0.528
Verical	2	STB30NF10T4	4,000	1K					0.554	0.502
TME	2	STB30NF10T4	541	1		1.960	1.336	0.840	0.613	0.550	35m
DigiKey	2	497-6550-1-ND	12	1	Cut Tape	2.160	1.378	0.931	0.740	0.740

数据表和文档

下载 STMicroelectronics STB30NF10T4 的数据表和制造商文档。

IHS

Datasheet16 页20 年前

Factory Futures

Components Direct

iiiC

Mouser

库存历史记录

3 个月趋势:

+3.50%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1980-01-04

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics STB30NF10T4 的描述。

N-CHANNEL 100V 0.038 OHM 35A D2PAK LOW GATE CHARGE STripFET II MOSFET

STMicroelectronics

N-Channel 100 V 0.045 Ohm Surface Mount STripFET II MosFet - D2PAK

Future Electronics

STB30NF10T4 N-CHANNEL MOSFET TRANSISTOR, 35 A, 100 V, 3-PIN D2PAK

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

MOSFET, N CH, 100V, 35A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 15A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 115W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 35A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

Farnell

Mosfet, N Channel, 100V, 35A, D2Pak; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:15A; Tensión Drenaje-Fuente Vds:100V; Resistencia De Activación Rds(On):38Mohm; Tensión Vgs De Medición Rds(On):10V |Stmicroelectronics STB30NF10T4

Newark