STMicroelectronics STB23NM60ND

N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh(TM) II Power MOSFET (with fast diode) D2PAK
$ 2.7
Obsolete
制造商页面数据表

价格与库存

查看所有价格优惠
DistributorSKUMinPkg
RS (Formerly Allied Electronics)STB23NM60ND01Bulk
23h
Farnell
2
STB23NM60ND01Cut Tape
10h
Weyland Electronics Group Pte. Ltd.STB23NM60ND9451Tape & Reel
12h
Win SourceWS-STB23NM60ND1,15018
11h
Worldway ElectronicsSTB23NM60ND27,7277Tape & Reel
9h

数据表和文档

下载 STMicroelectronics STB23NM60ND 的数据表和制造商文档。

IHS

Datasheet22 页14 年前

element14 APAC

Factory Futures

Future Electronics

Verical

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备用零件

此零件
备用零件
STMicroelectronicsSTB23NM60ND
onsemiFCB20N60TM
onsemiFCB20N60TM
Price @ 1000
$ 2.7
$ 2.61
$ 2.61
Stock
181,713
269,025
269,025
Authorized Distributors
2
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
600 V
600 V
600 V
Continuous Drain Current (ID)
19.5 A
20 A
20 A
Threshold Voltage
4 V
5 V
5 V
Rds On Max
180 mΩ
190 mΩ
190 mΩ
Gate to Source Voltage (Vgs)
25 V
30 V
30 V
Power Dissipation
150 W
208 W
208 W
Input Capacitance
2.05 nF
3.08 nF
3.08 nF

供应链

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in D2PAK package
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STMicroelectronicsSTB21NM60ND
N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in D2PAK package
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onsemiFCB20N60TM
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, D2PAK
详细信息

描述

由其分销商提供的 STMicroelectronics STB23NM60ND 的描述。

N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh(TM) II Power MOSFET (with fast diode) D2PAK
STMicroelectronics
Mosfet Transistor, N Channel, 10 A, 600 V, 150 Mohm, 10 V, 4 V Rohs Compliant: Yes
Newark
STB23NM60ND N-CHANNEL MOSFET TRANSISTOR, 19.5 A, 600 V, 2+TAB-PIN TO-263
RS (Formerly Allied Electronics)
Trans MOSFET N-CH 600V 19.5A 3-Pin(2+Tab) D2PAK T/R
Verical
Single N-Channel 600 V 0.18 Ohm 69 nC 150 W Silicon SMT Mosfet - TO-263-3
Future Electronics
Power Field-Effect Transistor, 19.5A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IHS
MOSFET, N CH, 600V, 20A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
Farnell

图片

Farnell
RS (Formerly Allied Electronics)
RS
Future Electronics
iiiC
Lanka Micro

制造商别名

STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics