STMicroelectronics MJD122T4

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

TRANSISTOR, DARLINGTON, NPN, AMPLIFIER, POWER, VO 100V, VI 5V, IO 8A, PD 20W, TO-252

Trans Darlington NPN 100V 8A 20000mW 3-Pin(2+Tab) DPAK T/R

Darlington Transistors, NPN, 100 V, 8 A, 20 W, 1000 hFE, 3 Pins, TO-252 (DPAK)

TRANSISTOR, BJT, NPN, 100V, 8A, TO-252-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 20W; DC Collector Current: 5A; DC Current Gain hFE: 1000hFE; Trans

Darlington Transistor, Npn, 100V, To-252; Transistor Polarity:Npn; No. Of Pins:3Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:100V Rohs Compliant: Yes |Stmicroelectronics MJD122T4

Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 100 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 4 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 4.5