onsemi MJD122T4G

Name: onsemi MJD122T4G
Brand: onsemi
SKU: MJD122T4G

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

$ 0.415

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Distributor		SKU		Min	Pkg
Avnet	2	MJD122T4G	10,000	2500						0.338	8h
Newark	3	MJD122T4G	2,684	1	Cut Tape	1.250	1.040	0.746	0.542	0.542
Arrow Electronics	2	MJD122T4G	181	1		0.645	0.514	0.339	0.339	0.339
Verical	2	MJD122T4G	181	18				0.339	0.339	0.339
Master Electronics		MJD122T4G	3,799	100				0.570	0.400	0.309

数据表和文档

下载 onsemi MJD122T4G 的数据表和制造商文档。

Upverter

Datasheet7 页17 年前

Datasheet9 页9 年前

IHS

Newark

Farnell

Master Electronics

库存历史记录

3 个月趋势:

+24.66%

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onsemiMJD122T4G

onsemiMJD122G

Price @ 1000

$ 0.415

$ 0.51

Stock

3,530,178

426,124

Authorized Distributors

Mount

Case/Package

DPAK

Polarity

NPN

Collector Emitter Breakdown Voltage

100 V

Max Collector Current

8 A

Transition Frequency

4 MHz

Collector Emitter Saturation Voltage

2 V

4 V

hFE Min

100

Power Dissipation

20 W

1.75 W

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1991-06-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi MJD122T4G 的描述。

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

IHS

8.0 A, 100 V NPN Darlington Bipolar Power Transistor

onsemi

Bipolar Transistors (BJT); MJD122T4G; ON SEMICONDUCTOR; NPN; 3; 100 V; 8 A

Maritex

MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252-3

Future Electronics

ON SEMI MJD122T4G NPN DARLINGTON TRANSISTOR, 8 A 100 V HFE:100, 3-PIN DPAK

RS (Formerly Allied Electronics)

Trans Darlington NPN 100 Volt 8A 3-Pin (2+Tab) DPAK Tape and Reel

Jameco

DARLINGTON TRANSISTOR, NPN, 100V, D-PAK, FULL REEL

Farnell

DARLINGTON TRANSISTOR, NPN, 100V, D-PAK, FULL REEL; Transistor Polarity:NPN; No. of Pins:3Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:100V RoHS Compliant: Yes

Newark

Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 1000 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 4 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 4 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 4.5 / Reflow Temperature Max. °C = 260

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