备用零件
Price @ 1000
$ 0.541
$ 0.6
Stock
503,414
607,133
Authorized Distributors
6
6
Mount
Through Hole
-
Case/Package
TO-220
TO-220-3
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
80 V
80 V
Max Collector Current
10 A
10 A
Transition Frequency
50 MHz
50 MHz
Collector Emitter Saturation Voltage
1 V
1 V
hFE Min
40
40
Power Dissipation
50 W
2 W
描述
由其分销商提供的 STMicroelectronics D44H11 的描述。
Bipolar (BJT) Single Transistor, NPN, 80 V, 10 A, 50 W, TO-220, Through Hole
D44H11 Series NPN/PNP 80 V 10 A Silicon Power Transistor Flange Mount - TO-220
TRANSISTOR, BIPOLAR, SI, NPN, AMPLIFIER, POWER, VCEO 80V, IC 10A, PD 50W, TO-220,HFE 60
TRANS NPN 80V 10A TO-220 / Trans GP BJT NPN 80V 10A 50000mW 3-Pin(3+Tab) TO-220AB Tube
80V 50W 40@4A,1V 10A NPN TO-220 Bipolar Transistors - BJT ROHS
STMicroelectronics NPN Transistor, TO-220 Package, TH Mount, 20A Ic, 80V Vceo
COMPLEMENTARY SILICON POWER TRANSISTOR Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Power Bipolar, NPN, 1V, 400mA, TO-220, Tube
STMicroelectronics SCT
Power Transistor, TO-220, NPN, 80V
TRANSISTOR, NPN; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:50W; DC Collector Current:10A; DC Current Gain hFE:60; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:1V; Current Ic Continuous a Max:10A; Hfe Min:40; Package / Case:TO-220; Power Dissipation Pd:50W; Termination Type:Through Hole
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight9.071847 g
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)80 V
Current Rating10 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min40
Max Collector Current10 A
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation50 W
Schedule B8541290080
Transition Frequency50 MHz
Voltage Rating (DC)80 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm