备用零件
Price @ 1000
$ 0.62
$ 0.532
Stock
908,313
641,775
Authorized Distributors
6
6
Mount
-
Through Hole
Case/Package
TO-220-3
TO-220
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
80 V
80 V
Max Collector Current
10 A
10 A
Transition Frequency
50 MHz
50 MHz
Collector Emitter Saturation Voltage
1 V
1 V
hFE Min
40
40
Power Dissipation
2 W
50 W
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.75
Introduction Date1994-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi D44H11G 的描述。
Bipolar (BJT) Single Transistor, Audio, NPN, 80 V, 10 A, 70 W, TO-220, Through Hole
Bipolar Transistors (BJT); D44H11G; ON SEMICONDUCTOR; NPN; 3; 80 V; 10 A
Power Bipolar Transistor, NPN, 10 A, 80 V
D44 Series 80 V 10 A NPN Complementary Silicon Power Transistor - TO-220AB
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 80V 10A 2000mW 3-Pin(3+Tab) TO-220AB Tube
Power Transistor, TO-220, NPN, 80V
onsemi NPNTransistor, TO-220ABencapsulation, Through hole mounting, Maximum DC collector current10 A, maximum collector-emission voltage80 V
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 70W; DC Collector Current: 10A; DC Current Gain hFE: 60hFE; Transistor Case Styl
. . . for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators converters and power amplifiers.
Bipolar Transistor, Npn, 80V To-220; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:10A; Power Dissipation:70W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:50Mhzrohs Compliant: Yes |Onsemi D44H11G.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)80 V
Current Rating10 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency50 MHz
Gain Bandwidth Product50 MHz
hFE Min40
Max Collector Current10 A
Max Frequency50 MHz
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation2 W
Schedule B8541290080
Transition Frequency50 MHz
Voltage Rating (DC)80 V
Dimensions
Height9.28 mm
Length10.28 mm
Width4.82 mm