相关零件
描述
由其分销商提供的 ROHM RF4E080BNTR 的描述。
MOSFET N-CH 30V 8A 8-HUML / Trans MOSFET N-CH 30V 8A 8-Pin HUML T/R
Power Field-Effect Transistor, 8A I(D), 30V, 0.0246ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 30V, 8A, DFN2020;
2W(Ta) 20V 2V@ 250µA 14.5nC@ 10 V 1individualNChannel 30V 17.6mΩ@ 8A,10V 8A 660pF@15V DFN-2020-8 SMD mount 2mm(Length)*2mm(width)
制造商别名
ROHM 在全球拥有多个品牌，分销商可将其用作替代名称。ROHM 也可称为以下名称：
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals6
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance24.6 mΩ
Drain to Source Voltage (Vds)30 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance660 pF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Rds On Max17.6 mΩ
Rise Time10 ns
Turn-Off Delay Time33 ns
Turn-On Delay Time8 ns