供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-02-01
Lifecycle StatusObsolete (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
相关零件
STMicroelectronicsSTD30NF03LT4
N-channel 30 V, 0.02 Ohm typ., 30 A StripFET(TM) II PowerMOSFET in a DPAK package
VishaySUD45P03-09-GE3
Single P-Channel 30 V 8.7 mOhm Surface Mount TrenchFET Power Mosfet - TO-252
描述
由其分销商提供的 onsemi FDD6612A 的描述。
N-Channel PowerTrench® MOSFET, 30V, 30A, 20mΩ
N-Channel 30 V 20 mOhm Surface Mount PowerTrench Mosfet TO-252-3
30V N-CHANNEL POWER TRENCH MOSFET Power Field-Effect Transistor, 9.5A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:30A; On Resistance, Rds(on):20mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252 ;RoHS Compliant: Yes
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)9.5 A
Current Rating30 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance660 pF
Max Operating Temperature175 °C
Max Power Dissipation36 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Elements1
PackagingTape & Reel
Power Dissipation36 W
Rds On Max20 mΩ
Resistance20 MΩ
Rise Time5 ns
Threshold Voltage2 V
Turn-Off Delay Time24 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)30 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
合规
环境分类
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
合规声明