供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-12-15
Lifecycle StatusObsolete (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
相关零件
onsemiNTD50N03RT4G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 7.8A Ta 45A Tc 45A 50W 6.8ns
描述
由其分销商提供的 onsemi NTD4815NHT4G 的描述。
Power MOSFET 30V 35A 15 mOhm Single N-Channel DPAK
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 6.9A Ta 35A Tc 8.5A 1.92W 17.6ns
Trans MOSFET N-CH 30V 8.5A 3-Pin (2+Tab) DPAK T/R
6.9 A 30 V 0.015 ohm N-CHANNEL Si POWER MOSFET
Power Field-Effect Transistor, 6.9A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins4
Number of Terminals2
Technical
Continuous Drain Current (ID)6.9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance15 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time17.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance845 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation32.6 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape (CT)
Power Dissipation1.92 W
Rds On Max15 mΩ
Rise Time17.6 ns
Turn-Off Delay Time11 ns
Turn-On Delay Time11.3 ns
Dimensions
Height2.51 mm