供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.75
Introduction Date1994-01-01
Lifecycle StatusEOL (Last Updated: 4 months ago)
LTB Date2026-09-30
LTD Date2027-09-30
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描述
由其分销商提供的 ROHM IMX5T108 的描述。
TRANS 2NPN 11V 0.05A 6SMT / Bipolar (BJT) Transistor Array
IMX5 Series 11 V 50 mA SMT Dual NPN High Transition Frequency Transistor-SC-74
RF Small Signal Bipolar Transistor, 0.05A I(C), 2-Element, Silicon, NPN
Trans GP BJT NPN 11V 0.05A 6-Pin SMT T/R
TRANSISTOR,NPNNPN,11V,0.05A,SOT-457; Module Configuration:Dual; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:11V; Power Dissipation Pd:300mW; DC Collector Current:50mA; DC Current Gain hFE:56; Transistor Case Style:SOT-457; No. of Pins:6; Gain Bandwidth ft Typ:3.2GHz
制造商别名
ROHM 在全球拥有多个品牌，分销商可将其用作替代名称。ROHM 也可称为以下名称：
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
技术规格
Physical
Case/PackageSMD/SMT
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Collector Base Voltage (VCBO)20 V
Collector Emitter Breakdown Voltage11 V
Collector Emitter Voltage (VCEO)11 V
Current Rating50 mA
Element ConfigurationDual
Emitter Base Voltage (VEBO)3 V
Gain Bandwidth Product3.2 GHz
hFE Min27
Max Breakdown Voltage11 V
Max Collector Current50 mA
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Elements2
PackagingTape & Reel (TR)
PolarityNPN
Power Dissipation300 mW
Transition Frequency1.4 GHz
Voltage Rating (DC)11 V