供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-01-28
Lifecycle StatusProduction (Last Updated: 5 months ago)
相关零件
ToshibaMT3S20TU(TE85L)
RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
描述
由其分销商提供的 ROHM 2SD2653KT146 的描述。
Bipolar (BJT) Transistor NPN 12V 2A 360MHz 200mW Surface Mount SMT3
Small Signal Bipolar Transistor, 2A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon
ROHM 2SD2653KT146 NPN Bipolar Transistor, 2 A, 12 V, 3-Pin SC-59 | ROHM Semiconductor 2SD2653KT146
Trans GP BJT NPN 12V 2A 3-Pin SMT T/R
TRANSISTOR,NPN,12V,2A,SOT-346; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 360MHz; Power Dissipation Pd: 200mW; DC Collector Current: 2A; DC Current Gain hFE: 270hFE; Transistor
制造商别名
ROHM 在全球拥有多个品牌，分销商可将其用作替代名称。ROHM 也可称为以下名称：
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
技术规格
Physical
Case/PackageSMD/SMT
Contact PlatingCopper, Silver, Tin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)15 V
Collector Emitter Breakdown Voltage12 V
Collector Emitter Saturation Voltage90 mV
Collector Emitter Voltage (VCEO)12 V
Continuous Collector Current2 A
Current Rating2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Gain Bandwidth Product360 MHz
hFE Min270
Max Breakdown Voltage12 V
Max Collector Current2 A
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
PolarityNPN
Transition Frequency360 MHz
Voltage Rating (DC)12 V
Dimensions
Height1 mm
Length2.9 mm
Width1.6 mm