供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-04-14
Lifecycle StatusNRND (Last Updated: 1 week ago)
相关零件
ToshibaMT3S20TU(TE85L)
RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
描述
由其分销商提供的 ROHM 2SD2701TL 的描述。
ROHM 2SD2701TL NPN Bipolar Transistor, 1.5 A, 30 V, 3-Pin TUMT | ROHM Semiconductor 2SD2701TL
Small Signal Bipolar Transistor, 2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 30V 1.5A 800mW 3-Pin TUMT T/R
350mV@ 50mA,1A NPN 800mW 6V 100nA 15V 12V 2A 2mm*1.7mm*770¦Ìm
Transistor, Npn, 30V, 1.5A, Sot-323T; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:30V; Transition Frequency Ft:300Mhz; Power Dissipation Pd:400Mw; Dc Collector Current:1.5A; Dc Current Gain Hfe:270Hfe; Transistor Caserohs Compliant: Yes |Rohm 2SD2701TL
制造商别名
ROHM 在全球拥有多个品牌，分销商可将其用作替代名称。ROHM 也可称为以下名称：
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
技术规格
Physical
Case/PackageSMD/SMT
Contact PlatingCopper, Tin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)15 V
Collector Emitter Breakdown Voltage12 V
Collector Emitter Saturation Voltage140 mV
Collector Emitter Voltage (VCEO)30 V
Continuous Collector Current2 A
Current Rating2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min270
Max Breakdown Voltage12 V
Max Collector Current2 A
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation400 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation800 mW
Transition Frequency300 MHz
Voltage Rating (DC)12 V
Dimensions
Height770 µm
Length2 mm
Width1.7 mm