供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-05-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-12-13
LTD Date2012-06-13
相关零件
InfineonIPD60R3K3C6ATMA1
MOSFET N-CH 600V 1.7A TO252-3 / Trans MOSFET N-CH 650V 1.7A Automotive 3-Pin(2+Tab) DPAK T/R
描述
由其分销商提供的 onsemi SSR1N60BTM-WS 的描述。
Power Field-Effect Transistor, 0.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Tape & Reel (TR) Surface Mount N-Channel MOSFET (Metal Oxide) Mosfet Transistor 900mA Tc 900mA 2.5W 600V
Trans MOSFET N-CH 600V 0.9A 3-Pin(2+Tab) DPAK T/R
N-CH/600V/0.9A/12OHM/SUBSTITUTE OF SSR1N60ATM
SSR1N60BTM_WS Fairchild/ON Semiconductor
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)900 mA
Drain to Source Resistance12 Ω
Drain to Source Voltage (Vdss)600 V
Gate to Source Voltage (Vgs)30 V
Input Capacitance215 pF
Max Operating Temperature150 °C
Max Power Dissipation28 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max12 Ω