相关零件
onsemiSSR1N60BTM-WS
Power Field-Effect Transistor, 0.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
描述
由其分销商提供的 onsemi FQD2N50TF 的描述。
MOSFET N-CH 500V 1.6A DPAK
Power Field-Effect Transistor, 1.6A I(D), 500V, 5.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
N-CHANNEL POWER MOSFET
MOSFETs 500V N-Channel QFET
MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:1.6A; On-Resistance, Rds(on):5.3ohm; Package/Case:2-TO-252; Leaded Process Compatible:No; Mounting Type:Through Hole; Peak Reflow Compatible (260 C):No RoHS Compliant: No
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)1.6 A
Current Rating1.6 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance5.3 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance230 pF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max5.3 Ω
Rise Time25 ns
Turn-Off Delay Time10 ns
Voltage Rating (DC)500 V