onsemi FQD1N60TM
$ 0.37
Obsolete
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-12-20
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2006-10-05
LTD Date2007-04-05
相关零件
onsemiSSR1N60BTM-WS
Power Field-Effect Transistor, 0.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
描述
由其分销商提供的 onsemi FQD1N60TM 的描述。
2.5W(Ta),30W(Tc) 5V@ 250¦ÌA 6nC@ 10V 1N 600V 11.5¦¸@ 500mA,10V 150pF@25V DPAK
Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) DPAK T/R
Power Field-Effect Transistor, 1A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
N-CHANNEL POWER MOSFET
Not available to order .
MISCELLANEOUS MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)1 A
Current Rating1 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance11.5 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance150 pF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max11.5 Ω
Rise Time25 ns
Turn-Off Delay Time7 ns
Voltage Rating (DC)600 V