价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | NTMS10P02R2G | 6,005 | 1 | 2d | ||||||||
| Newark | NTMS10P02R2G | 3,153 | 1 | Cut Tape | ||||||||
| Verical | NTMS10P02R2G | 7,500 | 2500 | |||||||||
| Arrow Electronics | NTMS10P02R2G | 2,498 | 1 | |||||||||
| Future Electronics | NTMS10P02R2G | 2,500 | 2500 | Tape & Reel |
备用零件
Price @ 1000
$ 0.611
$ 0.647
Stock
1,264,639
92,502
Authorized Distributors
6
2
Mount
-
-
Case/Package
SOIC
SOIC
Drain to Source Voltage (Vdss)
-
20 V
Continuous Drain Current (ID)
10 A
10 A
Threshold Voltage
-880 mV
-
Rds On Max
14 mΩ
14 mΩ
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
3.64 nF
3.64 nF
供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-08-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi NTMS10P02R2G 的描述。
P-Channel 20 V 14 mOhm 2.5 W Surface Mount Power MOSFET - SOIC-8
Single P−Channel Enhancement−Mode Power MOSFET -20V, -10A, 14mΩ
NTMS10P02R2G P-CHANNEL MOSFET TRANSISTOR, 6.4 A, 20 V, 8-PIN SOIC
1.6W(Ta) 12V 1.2V@ 250¦ÌA 70nC@ 4.5 V 1P 20V 14m¦¸@ 10A,4.5V 8.8A 3.64nF@16V SOIC-8 1.75mm
NTMS10P02: Power MOSFET 20V 10A 14 mOhm Single P-Channel SO-8
-10 AMPS, -20 VOLTS P-CHANNEL ENHANCEMENT MODE SINGLE SOIC-8 PACKAGE POWER MOSFET Small Signal Field-Effect Transistor, 8.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet, P-Ch, -20V, -8.8A, Soic-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.8A; Drain Source Voltage Vds:-20V; On Resistance Rds(On):0.012Ohm; Rds(On) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-880Mv; Power Rohs Compliant: Yes |Onsemi NTMS10P02R2G
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOIC
Contact PlatingTin
Number of Pins8
Number of Terminals6
Technical
Continuous Drain Current (ID)10 A
Current Rating-10 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance14 mΩ
Element ConfigurationSingle
Fall Time110 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance3.64 nF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation2.5 W
Rds On Max14 mΩ
Resistance14 MΩ
Rise Time40 ns
Schedule B8541290080
Threshold Voltage-880 mV
Turn-Off Delay Time110 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.5 mm
Length5 mm
Width4 mm