供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-07-26
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
描述
由其分销商提供的 onsemi FDS6898AZ 的描述。
Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ
Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R
Avnet Japan
Dual N-Channel 20 V 14 mOhm PowerTrench Mosfet -SOIC-8
20V 9.4A 14m´Î@4.5V9.4A 900mW 1.5V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS
MOSFET, NN; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:9.4A; Current Id Max:9.4A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):14mohm; Package / Case:SO-8; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight187 mg
Technical
Continuous Drain Current (ID)9.4 A
Current Rating9.4 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage20 V
Element ConfigurationDual
Fall Time16 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.821 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels2
Number of Elements2
Power Dissipation2 W
Rds On Max14 mΩ
Resistance14 MΩ
Rise Time15 ns
TerminationSMD/SMT
Threshold Voltage1 V
Turn-Off Delay Time34 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)20 V
Dimensions
Height1.75 mm
Length5 mm
Width4 mm