供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-16
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2010-10-14
LTD Date2011-04-14
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
相关零件
VishaySI2302CDS-T1-E3
MOSFET, N CH, 20V, 2.6A, SOT-23-3; Transistor Polarity:N Channel; Continuous Dra
InfineonBSS806NEH6327XTSA1
Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.057ohm; 0.5W; -55+150 deg.C; SMD; SOT23; AEC-Q100
描述
由其分销商提供的 onsemi NTLJD3183CZTAG 的描述。
Tape & Reel (TR) Surface Mount N and P-Channel Dual Mosfet Array 2.6A 2.2A 2.2A 710mW 12.5ns
Power MOSFET 20V 3.2A 100 mOhm Dual Complementary WDFN6 with ESD
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 3.2 A, 3.2 A, 0.1 ohm
Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)2.6 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance86 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time12.5 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance355 pF
Max Operating Temperature150 °C
Max Power Dissipation710 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements2
PackagingTape & Reel (TR)
Power Dissipation1.5 W
Rds On Max68 mΩ
Rise Time9 ns
Turn-Off Delay Time14 ns