供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-07-14
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-06-03
LTD Date2014-12-03
相关零件
VishaySI3460DDV-T1-GE3
Transistor: N-MOSFET; unipolar; 20V; 7.9A; 0.028ohm; 2.7W; -55+150 deg.C; SMD; TSOP6
VishaySI3585CDV-T1-GE3
Trans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R / MOSFET N/P-CH 20V 3.9A 6TSOP
描述
由其分销商提供的 Infineon BSL806NL6327HTSA1 的描述。
Transistor MOSFET Array Dual N-CH 20V 2.3A 6-Pin TSOP T/R
Trans MOSFET N-CH 20V 2.3A Automotive AEC-Q101 6-Pin TSOP T/R
2300 mA 20 V 2 CHANNEL N-CHANNEL Si SMALL SIGNAL MOSFET
Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSL806 SMALL SIGNAL FIELD-EFFECT;
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTSOP
MountSurface Mount
Number of Terminals6
Technical
Continuous Drain Current (ID)2.3 A
Drain to Source Resistance57 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time3.7 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance259 pF
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements2
PackagingTape & Reel (TR)
Rds On Max57 mΩ
Rise Time9.9 ns
Turn-Off Delay Time12 ns
Turn-On Delay Time7.5 ns