价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | NTLJD3115PTAG | 4,058 | 15h | |||||||||
| Avnet | NTLJD3115PTAG | 0 | 3K | 18h | ||||||||
| Win Source | WS-NTLJD3115PTAG | 3,400 | 170 | 16h | ||||||||
| Worldway Electronics | NTLJD3115PTAG | 17,303 | 7 | Tape & Reel | 16h | |||||||
| Fmall Co., Limited | NTLJD3115PTAG | 20,650 | >1wk |
备用零件
Price @ 1000
$ 0.186
$ 0.286
Stock
132,849
590,718
Authorized Distributors
2
6
Mount
-
-
Case/Package
-
DFN
Drain to Source Voltage (Vdss)
-
-
Continuous Drain Current (ID)
2.3 A
2.3 A
Threshold Voltage
-
-
Rds On Max
100 mΩ
100 mΩ
Gate to Source Voltage (Vgs)
8 V
8 V
Power Dissipation
1.5 W
1.5 W
Input Capacitance
531 pF
531 pF
供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-06-16
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2010-10-14
LTD Date2011-04-14
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi NTLJD3115PTAG 的描述。
Tape & Reel (TR) Surface Mount 2P-Channel (Dual) Dual Mosfet Array 2.3A -4.1A 710mW 15ns
Dual P-Channel Power MOSFET -20V -4.1A 100mΩ
MOSFETs- Power and Small Signal PFET 2X2 20V 4.1A 106MOHM
Power Field-Effect Transistor, 2.3A I(D), 20V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
NTLJD3115PTAG, SINGLE MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)2.3 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance135 mΩ
Element ConfigurationDual
Fall Time15 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance531 pF
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation1.5 W
Rds On Max100 mΩ
Rise Time15 ns
Turn-Off Delay Time19.8 ns