价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | NTLJD3115PT1G | 14,279 | 18h | |||||||||
| Verical | NTLJD3115PT1G | 3,000 | 1226 | |||||||||
| DigiKey | NTLJD3115PT1GOSCT-ND | 8,672 | 1 | Cut Tape | ||||||||
| Newark | NTLJD3115PT1G | 0 | 3K | Tape & Reel | ||||||||
| Onlinecomponents.com | NTLJD3115PT1G | 0 | 100 | Bulk |
备用零件
Price @ 1000
$ 0.286
$ 0.186
Stock
590,718
132,849
Authorized Distributors
6
2
Mount
-
-
Case/Package
DFN
-
Drain to Source Voltage (Vdss)
-
-
Continuous Drain Current (ID)
2.3 A
2.3 A
Threshold Voltage
-
-
Rds On Max
100 mΩ
100 mΩ
Gate to Source Voltage (Vgs)
8 V
8 V
Power Dissipation
1.5 W
1.5 W
Input Capacitance
531 pF
531 pF
供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-02-20
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Small Signal Field-Effect Transistor, 2.11A I(D), N-Channel, Metal-oxide Semiconductor FET
描述
由其分销商提供的 onsemi NTLJD3115PT1G 的描述。
NTLJD3115PT1G DUAL P-CHANNEL MOSFET TRANSISTOR, 4.1 A, 20 V, 6-PIN WDFN
Dual P-Channel Power MOSFET -20V -4.1A 100mΩ
Power MOSFET -20 V -4.1 A Cool Dual P-Channel 2x2 mm WDFN Package
Dual P-Channel 20 V 100 mOhm 1.5 W Surface Mount Power MOSFET - DFN-6W
MOSFET, DUAL P-CH, -20V, -3.3A, WDFN; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -3.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.075ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltag
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageDFN
Contact PlatingTin
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)2.3 A
Current Rating-4.1 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance135 mΩ
Element ConfigurationDual
Fall Time15 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance531 pF
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation1.5 W
Rds On Max100 mΩ
Resistance100 MΩ
Rise Time15 ns
Schedule B8541290080
Turn-Off Delay Time19.8 ns
Turn-On Delay Time6 ns
Voltage Rating (DC)-20 V
Dimensions
Height750 µm
Length2 mm
Width2 mm