onsemi NGTB40N65FL2WG

Trans IGBT Chip N-CH 650V 80A 36000mW 3-Pin(3+Tab) TO-247 Tube
$ 3.45
Production
制造商页面数据表

价格与库存

查看所有价格优惠
DistributorSKUMinPkg
Avnet
3
NGTB40N65FL2WG13,8491
21h
VericalNGTB40N65FL2WG39,50095
Rochester ElectronicsNGTB40N65FL2WG39,560
19h
DigiKeyNGTB40N65FL2WGOS-ND101Tube
Flip ElectronicsNGTB40N65FL2WG660
>1wk

数据表和文档

下载 onsemi NGTB40N65FL2WG 的数据表和制造商文档。

IHS

Datasheet11 页4 年前

JRH Electronics

onsemi

Electro Sonic

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:
-0.35%
Powered bySpectra logo

CAD 模型

从我们值得信赖的合作伙伴处下载 onsemi NGTB40N65FL2WG 符号、封装和 3D STEP 模型。

来源eCADmCAD文件
Component Search Engine
符号封装
3D下载
EE Concierge
符号封装
下载 CAD 模型时，合作伙伴网站将在新标签页中打开
从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

备用零件

此零件
备用零件
onsemiNGTB40N65FL2WG
onsemiNGTB40N60FL2WG
Price @ 1000
$ 3.45
$ 10.4
Stock
220,458
106,687
Authorized Distributors
6
2
Mount
Through Hole
Through Hole
Case/Package
TO-247-3
TO-247
Collector Emitter Breakdown Voltage
650 V
600 V
Max Collector Current
80 A
80 A
Power Dissipation
366 W
-
Collector Emitter Saturation Voltage
1.7 V
1.85 V
Reverse Recovery Time
72 ns
72 ns

供应链

Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

相关零件

onsemiFGH40T65UPD
Trans IGBT Chip N=-CH 650V 80A 268000mW 3-Pin(3+Tab) TO-247 Tube
详细信息
onsemiFGH50T65UPD
650V, 50A, Field Stop Trench IGBT 650V, 50A, Field Stop Trench IGBT
详细信息
onsemiNGTB40N60FL2WG
Trans IGBT Chip N-CH 600V 80A 366000mW 3-Pin(3+Tab) TO-247 Tube
详细信息
InfineonIHW40N65R5XKSA1
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
详细信息
InfineonIGW50N65F5FKSA1
Infineon IGW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
详细信息
InfineonIKW40N65H5FKSA1
650V DuoPack IGBT and Diode High speed switching series fifth generation
详细信息

描述

由其分销商提供的 onsemi NGTB40N65FL2WG 的描述。

Trans IGBT Chip N-CH 650V 80A 36000mW 3-Pin(3+Tab) TO-247 Tube
Verical
IGBT, 650V 40A FS2 Solar/UPS 650V/40A FAST IGBT FSII TO-247
onsemi
NGTB40N65: 650 V 80 A 366 W Through Hole Field Stop II IGBT - TO-247-3
Future Electronics
650V/40A FAST IGBT FSII T; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 366W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins;
Farnell
Igbt, Single, 650V, 80A, To-247; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:366W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C; Msl:- Rohs Compliant: Yes |Onsemi NGTB40N65FL2WG
Newark

图片

Newark
RS APAC
Rochester Electronics
RS (Formerly Allied Electronics)

制造商别名

onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd