Infineon IGW50N65F5FKSA1

Infineon IGW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
$ 1.672
Production

价格与库存

数据表和文档

下载 Infineon IGW50N65F5FKSA1 的数据表和制造商文档。

IHS

Datasheet14 页0 年前

Newark

TME

库存历史记录

3 个月趋势:
-13.47%

CAD 模型

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备用零件

Price @ 1000
$ 1.672
$ 3.304
Stock
168,974
61,696
Authorized Distributors
6
6
Mount
Through Hole
-
Case/Package
TO-247
-
Collector Emitter Breakdown Voltage
650 V
-
Max Collector Current
80 A
80 A
Power Dissipation
305 W
270 W
Collector Emitter Saturation Voltage
2.1 V
2.1 V
Reverse Recovery Time
-
-

供应链

Country of OriginGermany, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-11-12
Lifecycle StatusProduction (Last Updated: 2 weeks ago)

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描述

由其分销商提供的 Infineon IGW50N65F5FKSA1 的描述。

Infineon IGW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
IGBT Transistors IGBT PRODUCTS
IGW50N65 - DISCRETE IGBT WITHOUT
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.
IGBT, 650V, 50A, TO247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 305W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins;

制造商别名

Infineon 在全球拥有多个品牌,分销商可将其用作替代名称。Infineon 也可称为以下名称:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

零件编号别名

该零件可能有以下备用零件编号:

  • IGW50N65F5
  • SP000973426