onsemi NDS8934

Transistor MOSFET Array Dual P-Channel 20V 3.8A 8-Pin SOIC N T/R

Tape & Reel (TR) Surface Mount 2P-Channel (Dual) Dual Mosfet Array 30nC @ 4.5V 3.8A 900mW 30ns

Trans MOSFET P-CH 20V 3.8A 8-Pin SOIC T/R

Power Field-Effect Transistor, 3.8A I(D), 20V, 0.07ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

2W 8V 1V@ 250µA 30nC@ 4.5V 2individualPChannel 20V 70mΩ@ 3.8A,4.5V 3.8A 1.12nF@10V SOIC-8 SMD mount 4.9mm*3.9mm*1.75mm

MOSFETs Dual P-Ch FET Enhancement Mode

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.