MOSFET, DUAL, P, SMD, 8-SOIC; Transistor Polarity:P Channel; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-800mV; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:-3.8A; Current Id Max:3.8A; Drain Source Voltage Vds:-20V; Module Configuration:Dual; On Resistance Rds(on):75mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-800mV; Voltage Vgs Rds on Measurement:-4.5V
Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.8A; On Resistance Rds(On):0.075Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800Mv Rohs Compliant: Yes
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.