onsemi MMBT2907A

Name: onsemi MMBT2907A
Brand: onsemi
SKU: MMBT2907A

Transistor General Purpose BJT PNP 60 Volt 0.8A 3-Pin SOT-23

Obsolete

制造商页面数据表

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Distributor		SKU		Min	Pkg
element14 APAC	2	MMBT2907A	0	5	Cut Tape		0.094*	0.088*	0.056*	0.046*	5h
Farnell	3	MMBT2907A	0	5	Cut Tape		0.157*	0.073*	0.042*	0.036*	17h
Sensible Micro		MMBT2907A	11,440					0.014	0.013	0.013	5d
Component Stockers USA		MMBT2907A	59,848			0.100	0.070	0.010	0.010	0.010	>1wk
Win Source		WS-MMBT2907A	55,000	2035						0.020	18h

数据表和文档

下载 onsemi MMBT2907A 的数据表和制造商文档。

IHS

Datasheet12 页4 年前

Datasheet0 页0 年前

Datasheet2 页25 年前

Fairchild Semiconductor

Farnell

Upverter

onsemi

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此零件

备用零件

onsemiMMBT2907A

onsemiMMBT2907ALT1G

Price @ 1000

$ 0.037

Stock

386,911

114,741,953

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23

Polarity

PNP

Collector Emitter Breakdown Voltage

-60 V

Max Collector Current

600 mA

Transition Frequency

200 MHz

Collector Emitter Saturation Voltage

1.6 V

-400 mV

hFE Min

100

Power Dissipation

350 mW

225 mW

供应链

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1989-01-01

Lifecycle StatusObsolete (Last Updated: 6 days ago)

LTB Date2019-07-12

LTD Date2020-07-12

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)

描述

由其分销商提供的 onsemi MMBT2907A 的描述。

Transistor General Purpose BJT PNP 60 Volt 0.8A 3-Pin SOT-23

Jameco

60V 250mW 100@150mA,10V 600mA PNP SOT-23(TO-236) Bipolar Transistors - BJT ROHS

Dasenic

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

IHS

MMBT Series PNP 1000 mW 60 V 800 mA SMT General Purpose Transistor - SOT-23

Future Electronics

This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from process 63.

Fairchild Semiconductor

TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ ft:200MHz; Power Dissipation Pd:350mW; DC Collector Current:800mA; DC Current Gain hFE:300; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:-400mV; Continuous Collector Current Ic Max:800mA; Current Ic Continuous a Max:800mA; Current Ic hFE:150mA; Device Marking:BT2907A; Gain Bandwidth ft Min:200MHz; Gain Bandwidth ft Typ:200MHz; Hfe Min:100; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; SMD Marking:2F; Termination Type:SMD; Voltage Vcbo:60V

element14 APAC