备用零件
此零件
备用零件
Price @ 1000
$ 0.11
$ 0.281
Stock
618,141
937,923
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23-3
SOT-23-3
Polarity
PNP
PNP
Collector Emitter Breakdown Voltage
-60 V
60 V
Max Collector Current
800 mA
600 mA
Transition Frequency
200 MHz
200 MHz
Collector Emitter Saturation Voltage
-1.6 V
1.6 V
hFE Min
50
100
Power Dissipation
350 mW
250 mW
供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2002-07-19
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi BSR16 的描述。
Bipolar Transistors - BJT PNP Transistor General Purpose
PNP EPITAXIAL SILICON TRANSISTOR Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
BSR16 Series 60 V 800 mA Surface Mount PNP General Purpose Amplifier - SOT-23-3
Trans GP BJT PNP 60V 0.8A 3-Pin SOT-23 T/R
600 mA 60 V PNP Si SMALL SIGNAL TRANSISTOR TO-236AB
TRANS, PNP, -60V, -0.8A, 0.35W, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -60V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 350mW; DC Collector Current: -800mA; DC Current Gain hFE: 50hFE
Transistor Pnp 60V 0.8A Sot23; Transistor, Polaridad:Pnp; Tensión Colector Emisor V(Br)Ceo:-60V; Frecuencia De Transición Ft:200Mhz; Disipación De Potencia Pd:350Mw; Corriente De Colector Dc:-800Ma; Ganancia De Corriente Dc Hfe:100 |Onsemi BSR16..
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) mA = 800 / Collector-Emitter Voltage (Vceo) V = 60 / DC Current Gain (hFE) = 50 / Collector-Base Voltage (Vcbo) V = 60 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 200 / Power Dissipation (Pd) mW = 350 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.6 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 2.6 / Reflow Temperature Max. °C = 260
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Collector Base Voltage (VCBO)-60 V
Collector Emitter Breakdown Voltage-60 V
Collector Emitter Saturation Voltage-1.6 V
Collector Emitter Voltage (VCEO)60 V
Current Rating-800 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency200 MHz
Gain Bandwidth Product200 MHz
hFE Min50
Max Breakdown Voltage60 V
Max Collector Current800 mA
Max Frequency200 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityPNP
Power Dissipation350 mW
Schedule B8541210080
TerminationSMD/SMT
Transition Frequency200 MHz
Voltage Rating (DC)-60 V
Dimensions
Height1.2 mm
Length2.92 mm
Width1.3 mm