onsemi MJD122G

Name: onsemi MJD122G
Brand: onsemi
SKU: MJD122G

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

$ 0.51

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制造商页面数据表

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Distributor		SKU		Min	Pkg
Avnet	2	MJD122G	8,499	1		0.449	0.420	0.414	0.414	0.414	2d
Newark	2	MJD122G	312	1		1.240	1.140	1.140	0.525	0.507
Verical	5	MJD122G	245	16				0.500	0.479	0.388
Arrow Electronics	3	MJD122G	245	1		0.979	0.606	0.500	0.500	0.500
Future Electronics	2	MJD122G	7,900	30	Tube			0.620	0.600	0.570

数据表和文档

下载 onsemi MJD122G 的数据表和制造商文档。

Upverter

Datasheet7 页17 年前

Technical Drawing1 页3 年前

Datasheet8 页14 年前

Datasheet9 页9 年前

IHS

onsemi

Farnell

element14 APAC

库存历史记录

3 个月趋势:

-15.57%

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onsemiMJD122G

onsemiMJD122T4G

Price @ 1000

$ 0.51

$ 0.415

Stock

420,949

3,596,023

Authorized Distributors

Mount

Case/Package

DPAK

Polarity

NPN

Collector Emitter Breakdown Voltage

100 V

Max Collector Current

8 A

Transition Frequency

4 MHz

Collector Emitter Saturation Voltage

4 V

2 V

hFE Min

100

Power Dissipation

1.75 W

20 W

供应链

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi MJD122G 的描述。

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

IHS

8.0 A, 100 V NPN Darlington Bipolar Power Transistor

onsemi

TRANSISTOR, DARLINGTON, SI, NPN, POWER, SWITCH, VO 100VDC, VI 5VDC, IO 8ADC, PD 20W

RS (Formerly Allied Electronics)

MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252-3

Future Electronics

Darlington Transistor, NPN, 100 V, 1.75 W, 8 A, TO-252 (DPAK), 3 Pins

Avnet

Trans Darlington NPN 100V 8A 1750mW 3-Pin(2+Tab) DPAK Tube / TRANS NPN DARL 100V 8A DPAK

Win Source

TRANSISTOR, DARLINGTON, 100V, 8A, D-PAK; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 1.75W; DC Collector Current: 8A; DC Current Gain hFE: 2500hFE; Tran

Farnell

Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 100 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tube / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 4 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 4.5 / Reflow Temperature Max. °C = 260

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