onsemi MBT3904DW1T1G

Bipolar Transistors (BJT); MBT3904DW1T1G; ON SEMICONDUCTOR; NPN; 6; 40 V; 200 mA

TRANSISTOR, BIPOLAR, SI, NPN, GENERAL PURPOSE, VCEO 40VDC, IC 200MA, PD 150W, SOT-363

Bipolar Transistor Array, General Purpose, Dual NPN, 40 V, 200 mA, 150 mW

General Purpose Transistors Dual NPN Ic=200mA Vceo=40V hfe=100~300 P=150mW SOT363

TRANSISTOR, BIPOLAR, NPN, DUAL 40V, SOT363, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max NPN:40V; Collector Emitter Voltage Max PNP:-; Continuous Collector Current NPN:200mA; Power Dissipation NPN:150mW RoHS Compliant: Yes

The MBT3904DW1T1 MBT3904DW2T1 and MBT3906DW1T1 devices are spin-offs of our popular SOT-23/SOT-323 three-leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package these devices are ideal for low-power surface mount applications where board space is at a premium.

Transistor Polarity = NPN / Configuration = Dual / Continuous Collector Current (Ic) mA = 200 / Collector-Emitter Voltage (Vceo) V = 40 / DC Current Gain (hFE) = 30 / Collector-Base Voltage (Vcbo) V = 60 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 300 / Power Dissipation (Pd) mW = 150 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 300 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 950 / Reflow Temperature Max. °C = 260