供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-10-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-12-11
LTD Date2010-06-11
相关零件
InfineonIPB80N06S407ATMA2
60V, N-Ch, 7.1 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
InfineonIPB45N06S4L08ATMA3
60V, N-Ch, 7.9 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
描述
由其分销商提供的 onsemi HUF76419S3ST 的描述。
MOSFET N-CH 60V 29A D2PAK
60V N-Channel Logic Level UltraFET MOSFET
PWR MOS ULTRAFET 60V/30A/0.042 OHMS N-CH LL TO-263AB T&R
MOSFETs 20a, 60V, 0.043 Ohm Logic Level N-Ch
Power Field-Effect Transistor, 29A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)29 A
Current29 A
Current Rating27 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance40 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time74 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance900 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation75 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation100 W
Rds On Max35 mΩ
Rise Time150 ns
Turn-Off Delay Time25 ns
Turn-On Delay Time5.9 ns
Voltage60 V
Voltage Rating (DC)60 V
Dimensions
Height5.08 mm