供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-07-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-09-14
LTD Date2012-03-14
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N-CHANNEL SINGLE WITH BUILT-IN DIODE TO-263AB SILICON Mosfet Transistor 35A 55V 0.034Ohm
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描述
由其分销商提供的 onsemi FDB20AN06A0 的描述。
N-Channel PowerTrench® MOSFET 60V, 45A, 20mΩ
Trans MOSFET N-CH 60V 9A 3-Pin(2+Tab) D2PAK T/R
TAPE REEL / 60V,45A,20 OHM, NCH,POWER TRENCH MOSFET
TO-263AB, N-CH ULTRAFET TRENCH MOSFET 60V, 46A, 26MOHM
Power Field-Effect Transistor, 45A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFETs N-Channel PT 6V, 45A, 2 mOhm
MOSFET N-CH 60V 9A/45A TO263AB
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)9 A
Current Rating45 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time33 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance950 pF
Max Operating Temperature175 °C
Max Power Dissipation90 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation90 W
Rds On Max20 mΩ
Rise Time98 ns
Turn-Off Delay Time23 ns
Voltage Rating (DC)60 V